Efficient photodiode-waveguide coupling for hybrid integrated optical circuits

A GalnAsP edge-detecting photodiode was coupled with an SiO2-TiO2 single-mode waveguide in a simple hybrid integration scheme. The newly developed edge-detecting photodiode with a window region was used to improve photodiode durability.     

Shock-induced phase transition of oriented pyrolytic graphite to diamond at pressures up to 15 GPa

In studies of shock-induced phase transition of ordered pyrolytic graphite to a diamond-like phase, the lowest transition onset pressure was observed at 19.6 GPa. The phase transition in that case was considered to be martensitic. In the present study ordered pyrolytic graphite with voids between particles was loaded at pressures up to 15 GPa using a planar shock wave propagating along the basal plane of the graphitic crystal structure. As a result, both diamond-like carbon and diamond were observed in the postshock sample. The phase transition of graphite to diamond was assumed to occur by the release of distortional energy stored in the graphite particles, that is, diffusional-controlled reconstructive mechanism, on the basis of the data by high resolution electron microscopy together with electron energy loss spectroscopy.     

Effects of electrode arrangement and pressure on synthesis of diamond films by arc discharge plasma jet chemical vapor deposition

The setup and deposition conditions of electrode arrangement and pressure have been studied to synthesize diamond films at high growth rate on wide area efficiently by arc discharge plasma jet chemical vapor deposition. An apparatus has been used in which four plasma torches, one is used for cathode and the others for divided anodes, are arranged and the positions of these torches are changeable. Growth rate, deposition area and thickness of diamond films have increased with changing the electrode arrangements without improvement of thickness variation. Maximum growth rate of our apparatus has occurred at the pressure of 6.7 kPa and diamond films that have less variations of quality and surface roughness have been synthesized at lower pressure during deposition. Moreover, a high conversion rate, which is the ratio of carbon atoms that form diamond in supplied methane gas, of 16% has been obtained at the pressure of 6.7 kPa and methane concentration of 2%.     

Polyacene capacitors

We fabricated two types of polyacene capacitor with extremely stable polyacenic semiconductor (PAS) as the positive and negative electrodes. The first one is a coin-type PAS capacitor (six different sizes), which possesses large capacity with high reliability. Its capacity is much larger than that of the conventional electric double-layer capacitor which uses activated carbon as electrode. PAS capacitor can maintain more than 70% of the initial capacity even after 100 000 cycles. Moreover, this capacitor can be charged and discharged in a few minutes as well as at low rate. The second one is a cylinder-type PAS capacitor (diameter: 18 mm, height: 65 mm) which shows high capacity of 100 F and can discharge at the extremely high rate of 80 C. The coin-type PAS capacitor is currently used for memory back-up of electrical and communication equipment, and the cylinder-type is considered to be useful as power back-up for starting drive parts of electric equipment which needs high power density.     

Electrical properties at p-ZnSe/metal interfaces

In order to prepare low resistance ohmic contacts to p-ZnSn by the “deposition and annealing (DA)” technique which has been extensively used for GaAs and Si-based devices, formation of a heavily doped layer by the p-ZnSe/metal reaction is required. For p-ZnSe/Ni contacts, Ni and Se reacted preferentially at the ZnSe/Ni interface upon annealing at temperatures higher than 250°C. However, capacitance-voltage measurements showed that the net acceptor concentration (N_A-N_D) close to the p-ZnSe/Ni interface was reduced upon the Ni/ZnSe reaction, resulting in high contact resistance. For p-ZnSe/Au contacts, neither Au/ZnSe reaction nor reduction of the acceptor concentration were observed after annealing at temperatures lower than 300°C. This indicates that although the metal/p-ZnSe reaction is mandatory to prepare a heavily doped layer, the reaction induced an increase in the compensation donors in the p-ZnSe substrate. In order to increase the acceptor concentration in the vicinity of the p-ZnSe/metal interface through diffusion from the contact materials, Li or O which was reported to play the role of an acceptor in ZnSe was deposited with a contact metal and annealed at elevated temperatures. Ni or Ag was selected as the contact metal, because these metals were expected to enhance Li or O doping by reacting with ZnSe. However, the current density-voltage characteristics of the Li(N)/Ni and Ag(O) contacts exhibited rectifying behavior, and the contact resistances increased with increasing annealing temperature. The present results indicated that, even though the acceptor concentration in the p-ZnSe substrate increased by diffusion of the dopants from the contact elements, an increment of the compensation donors was larger than that of the acceptors. The present experiments indicated that preparation of low resistance ohmic contacts by forming a heavily doped intermediate layer between p-ZnSe and metal is extremely difficult by the DA technique.     

An image processing system using Image Signal Multiprocessors (ISMPs)

This paper describes an image processing system using Image Signal Multiprocessors (ISMPs) adapted to gray-level image preprocessing for image analysis and image enhancement. It is composed of four ISMPs, five 1H-delay-lines, two 512×512×8-bit frame memories, a video timing controller (VTC), two 256-word ×8-bit ×8-table Look Up Tables (LUTs) and 80 nsec/sampling A/D and D/A converters. This multiprocessor system performs convolution operations such as spatial filters, contrast enhancement, and binarization for gray-level images, thinning, thickening, pattern matching etc. for binary images, and image quality improvement for moving images such as T.V. images. Otherwise, it performs feature extraction operations such as area calculations, fillet coordination, and moment calculations for objective image data. Moreover, this system is capable of applying color image processing by using a multiboard system.     

Twin-Related Tetragonal Variants in Yttria Partially Stabilized Zirconia

Crystals of yttria partially stabilized zirconia were grown by the arc-image floating-zone technique and studied by transmission electron microscopy. Crystals annealed at 1700°C consist of tetragonal precipitates and a cubic matrix. The platelike domains in a precipitate are twin-related tetragonal variants stacked alternately parallel to the (011) twin plane. The axial relations between the tetragonal precipitate and the cubic matrix are [100]_tetragonal|[100]_cubic, [011]_tetragonal|[011]_cubic.     

Experimental and numerical analyses of magnetic effect on OH radical distribution in a hydrogen-oxygen diffusion flame

The effect of magnetic field on OH radical distribution in a hydrogen-oxygen diffusion flame was experimentally and numerically investigated to explore the possibility of combustion control by magnetic force. In experiments, a coaxial type of burner was set between the magnet pieces. Two-dimensional (2D) cross-section distributions of OH* chemiluminescence intensity and OH fluorescence intensity were obtained with spectroscopic techniques using a CCD camera and a Planar Laser-Induced Fluorescence (PLIF) system, respectively. It was clearly seen that the high-density regions of OH* and OH radicals axisymmetrically migrated toward the central axis of the flame due to the influence of the magnetic field. In numerical simulations, such a phenomenon was qualitatively reproduced by solving the equations of reactive gas dynamics and magnetism. As a result, it was found that the magnetic force does not directly and selectively induce the diffusion velocity (the relative velocity) of OH itself. Alternatively, the magnetic force acting on O₂, whose mass density and magnetic susceptibility are much larger than those of other chemical species, causes the change in the mean velocity (the mass-average velocity) of mixture gas to transport the OH radical distribution indirectly and passively.     

Direct dispersion measurement of highly-erbium-doped optical amplifiers using a low coherence reflectometer coupled with dispersive fourier spectroscopy

The group delay and dispersion, including the erbium ion contributions, of the highly erbium-doped silica planar waveguide amplifier and multicomponent glass fibre amplifiers are directly measured at different pump powers using a low coherence reflectometer and dispersive Fourier spectroscopy. This method derives the refractive index spectra of these amplifiers directly from the produced reflectograms without any physical or mathematical assumptions. The dispersion of the planar waveguide amplifier at 500 mW pumping changes between +300 and -200 ps/km/nm with a 0.4 wt.% erbium concentration.<>